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| CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 50 Volts APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. CHT84WPT CURRENT 0.13 Ampere FEATURE * Small surface mounting type. (SC-70/SOT-323) * High density cell design for low RDS(ON). * Suitable for high packing density. * Rugged and reliable. * High saturation current capability. * Voltage controlled small signal switch. (3) SC-70/SOT-323 (2) 1.30.1 0.30.1 0.65 2.00.2 0.65 1.250.1 (1) CONSTRUCTION * P-Channel Enhancement MARKING * AW D 0.05~0.2 0.1Min. 0.8~1.1 0~0.1 2.0~2.45 CIRCUIT 1G S 3 2 TA = 25C unless otherwise noted Dimensions in millimeters SC-70/SOT-323 Absolute Maximum Ratings Symbol Parameter CHT84WPT Units VDSS Drain-Source Voltage -50 V VGSS Gate-Source Voltage - Continuous 20 -0.13 V ID Maximum Drain Current - Continuous A PD Maximum Power Dissipation 200 -55 to 150 mW TJ,TSTG Operating and Storage Temperature Range C Thermal characteristics RJA Thermal Resistance, Junction-to-Ambient 625 C/W 2004-03 RATING CHARACTERISTIC CURVES ( CHT84WPT ) Electrical Characteristics T Symbol Parameter A = 25C unless otherwise noted Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current VGS = 0 V, ID = -250 A VDS = -50 V, VGS = 0 V VDS = -25 V, VGS = 0 V VGS = 20 V, VDS = 0 V VGS = -20 V, VDS = 0 V -50 -75 -15 -100 10 -10 V A nA nA nA Gate - Body Leakage, Forward Gate - Body Leakage, Reverse ON CHARACTERISTICS (Note 1) VGS(th) RDS(ON) gFS Gate Threshold Voltage VDS = VGS, ID = 1.0 mA -0.8 -1.6 6 -2.0 10 V Static Drain-Source On-Resistance VGS = -5.0 V, ID = 0.1 A Forward Transconductance VDS = -25 V , ID = 100 m A 0.05 S DYNAMIC CHARACTERISTICS Ciss Coss Crss ton toff Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time Turn-Off Time VDS = -25 V, VGS = 0 V, f = 1.0 MHz 45 25 12 10 18 pF VDD = -30 V ID = -270 mA, VGS = -10 V, RGEN = 50 nS RATING CHARACTERISTIC CURVES ( CHT84WPT ) Typical Electrical Characteristics Figure 1. On-Region Characteristics 600 15 Figure 2. On-Resistance Variation with Temperature I D , DRAIN-SOURCE CURRENT (A) DRAIN-SOURCE ON-RESISTANCE 500 R DS(ON) , NORMALIZED VGS = 5V 400 12 4.5V 9.0 V GS =-10V I D = -130m A 300 200 3.5V 3.0V 6.0 100 3.0 2.5V 0 0 1 2 3 4 5 V DS , DRAIN-SOURCE VOLTAGE (V) 0 -5 0 -2 5 0 25 50 75 100 T J , JUNCTION T EMPERATURE (C) 125 150 |
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